Ukukhula kwe-Crystal Crystal yokuhlanza nokuhlanzwa

Ukukhula kwe-Crystal Crystal yokuhlanza nokuhlanzwa

Mina. Ukuncipha okubonakalayo okuluhlaza nokuhlanjululwa kokuqala

1. ‌Ukukhetha okubonakalayo okuluhlaza nokuchotshozwa‌

• ‌Izidingo Zezinto Ezibonakalayo: Sebenzisa i-telturium ore noma i-anode slime (te okuqukethwe ≥5%), mhlawumbe mhlawumbe i-anode slime ye-anode (equkethe i-cu₂te, cu cse) njengento eluhlaza.
• ‌Inqubo yokuhlehlisa:
• Ukugcwala okumagceke kuya kusayizi wezinhlayiyana ≤5mm, kulandelwa yibhola lokugaya ku-≤200 mesh;
• Ukwahlukana kazibuthe (ubukhulu bamandla kazibuthe
• I-floth flot (ph = 8-9, ama-xanthate abaqoqi) ukuhlukanisa i-SIO₂, CUO, kanye nokunye ukungcola okungeyona kazibuthe.
• ‌Izinyathelo zokuzivikela: Gwema ukwethula umswakama ngesikhathi sokuhlekisa okumanzi (kudinga ukoma ngaphambi kokugazinga); Lawula umswakama oventuent ≤30%.

1. ‌Ukugazingiswa kwe-pyrometallurlical kanye ne-oxidation‌

• ‌Inqubo inqubomgomo:
• Izinga lokushisa eligazingi le-oxidation
• Isikhathi Sokugibela: amahora angama-6-8, nge-O₂ Flow Rate ye-5-10 l / min;
• I-Reagent: I-Sulfuric Acid ehlanganisiwe (98% H₂so₄), Mass Ratio Te₂so₄ = 1: 1.5.
• ‌Ukusabela kwamakhemikhali:
  Cu2Te + 26 23SO4 → 2CUSO4 → 2cuso4 + Teo2 + 2h2ocu2 Te + 2h2 + 2h2 + TE4 + 2CUSO4 + Teo2 + 2h2 o
• ‌Izinyathelo zokuzivikela: Ukulawula izinga lokushisa ≤600 ° C ukuvikela ukuguquguquka kwe-teo₂ (iphuzu elibilayo 387 ° C); Phatha igesi yokuphelelwa yi-Naoh Scumbers.

II. I-ElectroRefineng kanye ne-vacuum distillation

1. ‌I-ElectroRefing‌

• ‌Uhlelo lwe-electrolyte:
• Ukwakheka kwe-electrolyte: h₂so₄ (80-120g / L), Teo₂ (40-60g / L), Angeziyo (Gelatin 0.1-0.3g / L);
• Ukulawulwa kokushisa: 30-40 ° C, ukujikeleza kwegeyimu 1.5-2 m³ / h.
• ‌Inqubo inqubomgomo:
• Ubuningi Bamanje: 100-150 A / M², Cell Voltage 0.2-0.4V;
• Isikhala se-Electrode: 80-120mm, ubukhulu bemikhuba ye-cathode 2-3mm / 8h;
• Ukusebenza kahle kokususa: CU ≤5ppm, PB ≤1ppm.
• ‌Izinyathelo zokuzivikela: Hlala uhlunga i-electrolyte (ukunemba ≤1μm); ngomshini ama-anode we-anode avikelekile ukuvikela ukuphumelela.

1. ‌Ukugcona kwe-Vacumfu‌

• ‌Inqubo inqubomgomo:
• Ileveli ye-Vacuum: ≤1 × 10⁻²pa, lokushisa distillation 600-650 ° C;
• Ukushisa kwe-condenser Zone: 200-250 ° C, PE VAPOR CLENENSANE FAILAND RECHINAILAND ≥95%;
• Isikhathi se-Distillation: 8-12h, umthamo owodwa weqembu ≤50kg.
• ‌Ukusatshalaliswa ukungcola: Ukungcola okuphezulu (i-SE, S) kuqongelela phambili ngaphambili; Ukungcola okuphezulu (i-PB, AG) Hlala ezinsalela.
• ‌Izinyathelo zokuzivikelaI-Pre-Pump Vacuum System ku- ≤5 × 10⁻³pa ​​ngaphambi kokushisa ukuvikela i-te oxidation.

III. Ukukhula kwe-Crystal (Crystallization)

1. ‌Ukucushwa Kwemishini‌

• ‌Amamodeli we-Crystal Grough Fishace: I-TDR-70A / B (30kg umthamo) noma i-TRDL-800 (60KG umthamo);
• Indwangu Esebenzayo: I-Graphite Ebumsulwa (Okuqukethwe Ash ≤5ppm), Ubukhulu Φ 300 × 400mm;
• Indlela yokushisa: Ukushisa kokumelana kwe-Graphite, izinga lokushisa eliphakeme 1200 ° C.

1. ‌Inqubo inqubomgomo‌

• ‌Kuncibilika ukulawula:
• Ukushisa okuncibilikayo: 500-520 ° C, Melt Pool Depth 80-120mm;
• Igesi evikelayo: I-AR (purity ≥99.999%), Izinga Lokugeleza 10-15 l / Min.
• ‌Amapharamitha we-Crystallization:
• Izinga lokudonsa: 1-3MM / H, Crystal Rotation Speed ​​8-12rpm;
• I-CRETTITETIETIETIETIET: I-Axial 30-50 ° C / CM, I-Radial ≤10 ° C / CM;
• Indlela yokupholisa: isizinda se-Copper esipholile samanzi (izinga lokushisa lamanzi 20-25 ° C), ukupholisa okuphezulu kwe-radiative.

1. ‌Ukulawulwa kokungapheli‌

• ‌Ukuhlukaniswa Kwemiphumela: Ukungcola okufana no-fe, NI (ukuhlukaniswa kwe-coefflent <0.1) kuqongelela emingceleni yokusanhlamvu;
• ‌Ukukhumbula Imijikelezo: Imijikelezo engu-3-5, ukungcola okuphelele kwe-≤0.PPM.

1. ‌Izinyathelo zokuzivikela:

• Ukumboza ukuncipha komhlaba ngamapuleti we-graphite ukucindezela i-te ukuguquguquka (isilinganiso sokulahleka ≤0.5%);
• Gada ububanzi be-crystal ngesikhathi sangempela usebenzisa ama-laser gauges (ukunemba ± 0.1mm);
• Gwema ukuguquguquka kokushisa> ± 2 2 ° C ukuvikela ukwanda ukuyisanyulwa kwe-density (okuhlosiwe ≤10³ / cm²).

IV. Ukuhlolwa kwekhwalithi namamethrikhi asemqoka

V. Amaphrothokholi wezemvelo nezokuphepha

1. ‌Ukuphelisa Ukwelashwa Kwegesi:

• Ukuqeda amandla okugazinga: hlangothi lwe-so₂ no-SEO₂ nge-Naoh Scumbers (ph≥10);
• Ukuqeda amandla okususa i-vacuum Amagesi asele akhishwe ama-adsorbed nge-carbon ecushiwe.

1. ‌Slag Recycling:

• I-Anode Slime (equkethe i-AG, AU): Phinda uthole nge-hydrometalluurgy (H₂SO₄-HCL System);
• Izinsalela ze-electrolysis (eziqukethe i-PB, CU): Buyela ezinhlelweni zokunciphisa ama-Copper.

1. ‌Izindlela zokuphepha:

• Opharetha kumele bagqoke imaski yegesi (i-TE Vapor inobuthi); Gcina i-verevation engemihle yokuhlobisa umoya (isilinganiso sokushintshana komoya ≥10 imijikelezo / h).

Imihlahlandlela yokwenza kahle

1. ‌Ukuguqulwa okubonakalayo okuluhlaza: Lungisa izinga lokushisa lokugazinga kanye ne-acid ratio ngamandla ngokusekelwe kwimithombo ye-anode slime (isib. I-Copper VS. Hola Smoreng);
2. ‌Ukufanisa kwesilinganiso sokudonsa kwe-Crystal: Lungisa isivinini sokudonsa ngokuya ngokuncibilika kwe-convection (Reynolds nombolo re≥2000) ukucindezela i-supercooling yomthethosisekelo;
3. ‌Ukusebenza kwamandla: Sebenzisa indawo yokushisa okushisa okubili (indawo enkulu engu-500 ° C, sub-zone 400 ° C) ukunciphisa ukusetshenziswa kwamandla kwe-graphite ukumelana namandla ngo-30%.