7N tellurium crystal incrementum et purificationem

7N tellurium crystal incrementum et purificationem

I. Rudis Material Pretreatment et Primae purificationis

1. ‌Rudis Material Electio et Crushing‌

• ‌Materia requiruntur: Usus tellurium ore vel Anode lotus (te content ≥5%), potissimum aeris odorat anode slime (quibus cuǽte, cu₂se) ut rudis materia.
• ‌Pretreatment Processus:
• Crassum adtritis particula magnitudine ≤5mm secutus pila milling ad ≤200 reticulum;
• Magna separationem (Magnetic ager intensionem ≥0.8t) ad removendum fe, ni et alia magnetica impudicitiis;
• Thomas flotation (PH = 8-9, Xanthate collectores) ad separandum sio₂, cuo et alia non-magnetica impudicitiis.
• ‌Cautiones: Vitare introducendis humorem durante infectum preteratment (exigit siccatio ante torrendum); Imperium ambientium Umor ≤30%.

1. ‌Pyrometallurgical torrendum et oxidatio‌

• ‌Processus parametri:
• Oxidatio torrendum temperatus: 350-600 ° C (ridiculo imperium: humilis temperatus ad Desulfurization, summus temperatus ad oxidatio);
• Tumor tempus: 6-8 horis, cum O₂ rate of 5-10 l / min;
• Reagent: concentrated sulfuric acidum (XCVIII% H₂so₄), Missam Ratio te₂so₄ = I, 1.5.
• ‌Eget reactionem:
  Cu2te + 2o2 + 2h4So4 → 2Co2 + + 2H2ocu2 te + 2,2 + 2H2 SO4 → 2Coo4 + + + 2H2 o
• ‌Cautiones: Imperium temperatus ≤600 ° C ne Teo₂ volatilizationis (ferventis Point CCCLXXXVII ° C); Tractare exhauriunt Gas cum Naoh scrutros.

II. Electrorfining et vacuo distillation

1. ‌Electrorefining‌

• ‌Electrolyte System:
• Electrolyticensis compositionem: H₂so₄ (80-120g / l), Teo₂ (40-60g / L), ELOGIUM (GELATINI 0.10.3G / L);
• Temperature Imperium: 30-40 ° C, circulationem rate 1.5-2 mww / h.
• ‌Processus parametri:
• Current density: 100-150 A / M², cellula voltage 0.2-0.4V;
• Electrode spacing: 80-120mm, cathode depositione crassitudine 2-3mm / 8h;
• Impuram remotionem efficientiam: CU ≤5ppm, PB ≤1ppm.
• ‌Cautiones: Regulariter filter electrolyticis (accuracy ≤1μm); Mechanice Poloniae Anode Superficierum ne passivation.

1. ‌Vacuum Distillation‌

• ‌Processus parametri:
• Vacuum Level: × 10⁻²pa ×, 600-650 Distillation Temperature ° C;
• Condenser Zonam Temperature: 200-250 ° C, Te vapor Condensitas efficientiam ≥95%;
• Distillation Time: 8-12h, unum-batch facultatem ≤550kg.
• ‌Immunditia distribution: Minimum-ferventis impurities (se, s) cumulare ad condenser frontem; High-ferventis impurities (PB, AG) in residua.
• ‌Cautiones: Pre-sentinam vacuo system ad ≤5 × 10⁻⁻pa ante calefactio ne te oxidatio.

III. Crystal augmentum (Directional Crystallization)

1. ‌Apparatu configuratione‌

• ‌Crystal incrementum fornacem exempla: TDR-70a / B (30kg facultatem) vel Trdl DCCC (60kg facultatem);
• Crucible materia: summus puritas graphite (cinis contentus ≤5ppm), dimensiones φ300 × 400mm;
• Calefactio modum: Graphite resistentia calefactio, maximum temperatus MCC ° c.

1. ‌Processus parametri‌

• ‌Imperium:
• Melting Temperature: 500-520 ° C, Melt Laptem profundum 80-120mm;
• Protective Gas: Ar (puritate ≥99.999%), fluunt rate 10-15 l / min.
• ‌Crystallization parametri:
• Tollens rate: 1-3mm / h, Crystal Rotation celeritate 8-12rpm;
• Temperatus CLIVUS: Axial 30-50 ° F / cm, radiale ≤10 ° F / cm;
• Refrigerant Methodo: aqua-refrigeratum aeris basi (aqua temperatus 20-25 ° C), summo radiative refrigerationem.

1. ‌Imperium immunditia‌

• ‌Segregatio: Imbrensis sicut FE, ni (segregationem coefficient <0.1) cumulare ad frumentum terminos;
• ‌Remelting CYCLES: 3-5 Cycles, ultima summa impurities ≤0.1ppm.

1. ‌Cautiones:

• Operculum conflandum superficies cum graphite laminas ad supprimere te volatilizationis (damnum rate ≤0.5%);
• Monitor crystallum diameter in ipsa tempus usura laser Gauges (accuracy ± 0.1mm);
• Vitare temperatus fluctus> ± II ° C ne peccet density crescat (target ≤10³ / C²).

IV. Qualis inspectionem et clavem metrics

V. Environmental et salus protocols

1. ‌Exhauriunt Gas curatio:

• Tumor exhaurit: corrumpere soeo₂ et Naoh Scrobbers (PH);
• Vacuum distillation exhauriunt: condense et recuperet te vapor; RELICTUM vapores adsorbed via activated ipsum.

1. ‌Sirus redivivus:

• UNDO Slime (quibus AG, AU): Recipe per Hydrometalluralgy (H₂so₄, HCL ratio);
• Electrolysis residua (quibus PB, cu), reditus ad aeris detractatione systems.

1. ‌Salus mensuras:

• Operators oportet gerunt gas larvis (te vapor est toxicus); Ponere negans pressura VENTILATIO (Aeris commutationem rate ≥10 cycles / h).

Processus Optimization Guidelines

1. ‌Rudis materiam accommodatio: Adjust tormentum temperatus et acidum ratio dynamically fundatur in Anode Slime Sources (eg, aeris vs. plumbum lumbi);
2. ‌Crystal trahens rate matching: Adjust trahens celeritate secundum solvendos (Reynolds Number re≥2000) ad supprimere constitutionalis supercooling;
3. ‌Efficientiam industria: Usus Dual-temperatus zone calefactio (Main Zonam D ° C, sub-Zonam CD ° C) ad redigendum Graphite resistentia potentia consummatio per XXX%.