7N tellurium crystal incrementum et purificationis processus details cum technica parametri

Et 7n tellurium Purificacionem processum combines zona conflans et directional crystallization technologiae. Key processus details et parametri sunt outlined infra:

I. Zona conflans processus
Equipment Design

Multi-iacuit annularis zona liquefacte Navis: diameter 300-500 mm altitudo 50-80 mm, factus de summus puritate quartz vel graphite.
Heating System: Semi-circularis repugnabat in temperatus imperium accurate de ± 0,5 ° C et maximum operating temperatus de DCCCL ° c.
Clavis parametri

Vacuum: ≤1 × 10⁻⁻ PA in ne oxidatio et contaminationem.
Zonam Travel Speed, 2-5 mm / h (unidirectional rotatione per coegi hastile).
Temperatus CLIVUS: DCCXXV D ± V ° C ad fusum zonam fronte, refrigerationem ad <D ° C ad trahentem obstupuerunt.
Transit: 10-15 Cycles; Remotionem Efficens> 99.9% ad impudicitiis cum segregationem coefficientes <0.1 (eg, cu, PB).
II. Directional crystallization processus
Conflandum

Material: 5N tellurium purificatum per zonam conflans.
Melting Conditions: liquefactum in iners AR Gas (≥99.999% puritatem) at 500-520 ° C uti summus frequency inductione calefacit.
Delicta tutela: High-puritatem Graphite operimentum ad supprimunt volatilizationis; Moldten stagnum profundius ad 80-120 mm.
Crystallization imperium

Rate incrementum: 1-3 mm / h cum verticali temperatus gradiente de 30-50 ° C / cm.
Refrigerant ratio: aqua refrigeratum aeris basi coactus deorsum frigefaciendo; Radiative refrigerationem ad summitatem.
Segregationem immunditiam: Fe, ni et aliis impudicitiis ditari ad frumentum terminos post 3-5 remessing Cycles, reducendo concentratione ad PPB levels.
III. Quality imperium metrics
Parameter Latin Value Reference
Final puritate ≥99.99999% (7n)
Total Metallic Impurities ≤0.1 PPM
Oxygeni contentus ≤5 PPM
Crystal orientation deviation ≤2 °
RESISTIVITUDIVITIA (CCC k) 0.1-0.3 ω · cm
Processus commoda
Scalability: Multi-iacuit annularis zona liquescens naves crescere batch facultatem per 3-5 × comparari conventional consilia.
Efficens: precise vacuo et scelerisque imperium activare princeps immunditia remotionem rates.
Crystal Quality: Ultra-tardus incrementum rates (<III mm / h) ensure humilis peccetur density et uno crystallum integritatem.
Hoc probatum 7n tellurium est critica ad provecta applications, comprehendo ultrared detectors, CDTE tenuis-film solaris cellulis et semiconductor.

References:
Data experimentum notitia ex pari-recenseo studiis in tellurium purificationem.